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SIRA14BDP-T1-GE3

¥3.67
单 FET、MOSFET

MOSFET N-CH 30V 21A/64A PPAK SO8

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C21A (Ta), 64A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs5.38mOhm @ 10A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs22 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds917 pF @ 15 V
FET Feature-
Power Dissipation (Max)3.7W (Ta), 36W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package/ CasePowerPAK® SO-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIRA14BDP-T1-GE3

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