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MCMN2014HE3-TP

¥3.46
单 FET、MOSFET

N-CHANNEL MOSFET, DFN2020-6LE

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)12 V
Current - Continuous Drain (Id) @ 25°C15A
Drive Voltage (Max Rds On, Min Rds On)2.5V, 8V
Rds On (Max) @ Id, Vgs8mOhm @ 5A, 8V
Vgs(th) (Max) @ Id1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs48 nC @ 8 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds1791 pF @ 10 V
FET Feature-
Power Dissipation (Max)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN2020-6LE
Package/ Case6-VDFN Exposed Pad

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Micro Commercial Components (MCC) 单 FET、MOSFET 产品 MCMN2014HE3-TP

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