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PMPB12R7EPX

¥3.46
单 FET、MOSFET
Nexperia

PMPB12R7EP - 30 V, P-CHANNEL TRE

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C8.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs15.5mOhm @ 8.7A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs49 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1638 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.9W (Ta), 12.5W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN2020M-6
Package/ Case6-UDFN Exposed Pad

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Nexperia 单 FET、MOSFET 产品 PMPB12R7EPX

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