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PMPB10R3XNX

¥3.02
单 FET、MOSFET
Nexperia

SMALL SIGNAL MOSFETS FOR PORTABL

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs12.2mOhm @ 8.9A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs9.9 nC @ 4.5 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds770 pF @ 15 V
FET Feature-
Power Dissipation (Max)1.5W (Ta), 19W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageDFN2020M-6
Package/ Case6-UDFN Exposed Pad

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Nexperia 单 FET、MOSFET 产品 PMPB10R3XNX

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