参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 5V, 5.5V |
Rds On (Max) @ Id, Vgs | 98mOhm @ 1.9A, 5.5V |
Vgs(th) (Max) @ Id | 2.4V @ 18mA |
Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 6 V |
Vgs (Max) | +6V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | 56W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DFN8080K |
Package/ Case | 8-PowerDFN |
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ROHM Semiconductor 单 FET、MOSFET 产品 GNP1070TC-ZE2
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