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SIDR500EP-T1-RE3

¥24.77
单 FET、MOSFET

N-CHANNEL 30 V (D-S) 175C MOSFET

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C94A (Ta), 421A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs0.47mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs180 nC @ 10 V
Vgs (Max)+16V, -12V
Input Capacitance (Ciss) (Max) @ Vds8960 pF @ 15 V
FET Feature-
Power Dissipation (Max)7.5W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8DC
Package/ CasePowerPAK® SO-8

新闻资讯

Vishay/ Siliconix 单 FET、MOSFET 产品 SIDR500EP-T1-RE3

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