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IRFR014PBF-BE3

¥10.51
单 FET、MOSFET

MOSFET N-CH 60V 7.7A DPAK

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C7.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs200mOhm @ 4.6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds300 pF @ 25 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 25W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252AA
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Vishay/ Siliconix 单 FET、MOSFET 产品 IRFR014PBF-BE3

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