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TSM500N15CS RLG

¥21.38
单 FET、MOSFET

150V, 11A, SINGLE N-CHANNEL POWE

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)150 V
Current - Continuous Drain (Id) @ 25°C4A (Ta), 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs50mOhm @ 4A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs20.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1123 pF @ 80 V
FET Feature-
Power Dissipation (Max)12.7W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device Package8-SOP
Package/ Case8-SOIC (0.154", 3.90mm Width)

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Taiwan Semiconductor 单 FET、MOSFET 产品 TSM500N15CS RLG

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