TJ60S06M3L(T6L1,NQ
¥16.13
MOSFET P-CH 60V 60A DPAK
参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 11.2mOhm @ 30A, 10V |
Vgs(th) (Max) @ Id | 3V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 156 nC @ 10 V |
Vgs (Max) | +10V, -20V |
Input Capacitance (Ciss) (Max) @ Vds | 7760 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 100W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DPAK+ |
Package/ Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TJ60S06M3L(T6L1,NQ
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