参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 7.9A (Ta), 28A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 26mOhm @ 7A, 10V |
Vgs(th) (Max) @ Id | 3V @ 38µA |
Gate Charge (Qg) (Max) @ Vgs | 11.5 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 800 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 3.5W (Ta), 46W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount, Wettable Flank |
Supplier Device Package | 5-DFNW (4.9x5.9) (8-SOFL-WF) |
Package/ Case | 8-PowerTDFN, 5 Leads |
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onsemi 单 FET、MOSFET 产品 NVMFWS027N10MCLT1G
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