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NVMFWS027N10MCLT1G

¥7.13
单 FET、MOSFET
onsemi

PTNG 100V LL SO8FL

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C7.9A (Ta), 28A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs26mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3V @ 38µA
Gate Charge (Qg) (Max) @ Vgs11.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 50 V
FET Feature-
Power Dissipation (Max)3.5W (Ta), 46W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device Package5-DFNW (4.9x5.9) (8-SOFL-WF)
Package/ Case8-PowerTDFN, 5 Leads

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onsemi 单 FET、MOSFET 产品 NVMFWS027N10MCLT1G

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