参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | - |
Rds On (Max) @ Id, Vgs | 500mOhm @ 500mA, 4V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | 1.5 nC @ 4 V |
Vgs (Max) | - |
Input Capacitance (Ciss) (Max) @ Vds | 115 pF @ 10 V |
FET Feature | Schottky Diode (Isolated) |
Power Dissipation (Max) | 600mW (Ta) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 6-SCH |
Package/ Case | 6-SMD, Flat Leads |
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