参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 800 V |
Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 110mOhm @ 43A, 10V |
Vgs(th) (Max) @ Id | 5V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 570 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 17550 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 960W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Chassis Mount |
Supplier Device Package | SOT-227 |
Package/ Case | SOT-227-4, miniBLOC |
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Microchip Technology 单 FET、MOSFET 产品 APT58M80J
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