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SPP04N80C3XKSA1

¥14.47
单 FET、MOSFET

MOSFET N-CH 800V 4A TO220-3

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.3Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id3.9V @ 240µA
Gate Charge (Qg) (Max) @ Vgs31 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds570 pF @ 100 V
FET Feature-
Power Dissipation (Max)63W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO220-3
Package/ CaseTO-220-3

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