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SIR608DP-T1-RE3

¥11.81
单 FET、MOSFET

MOSFET N-CH 45V 51A/208A PPAK

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)45 V
Current - Continuous Drain (Id) @ 25°C51A (Ta), 208A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs1.2mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs167 nC @ 10 V
Vgs (Max)+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds8900 pF @ 20 V
FET Feature-
Power Dissipation (Max)6.25W (Ta), 104W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SO-8
Package/ CasePowerPAK® SO-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIR608DP-T1-RE3

作为Vishay/ Siliconix优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购SIR608DP-T1-RE3时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买SIR608DP-T1-RE3绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解SIR608DP-T1-RE3产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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