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IPLK60R600PFD7ATMA1

¥11.16
单 FET、MOSFET

MOSFET N-CH 600V 7A THIN-PAK

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C7A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs600mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id4.5V @ 80µA
Gate Charge (Qg) (Max) @ Vgs8.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds344 pF @ 400 V
FET Feature-
Power Dissipation (Max)45W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TDSON-8-52
Package/ Case8-PowerTDFN

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Infineon Technologies 单 FET、MOSFET 产品 IPLK60R600PFD7ATMA1

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