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DMNH4011SPSQ-13

¥6.98
单 FET、MOSFET

MOSFET N-CH 40V PWRDI5060

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)40 V
Current - Continuous Drain (Id) @ 25°C12.9A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs10mOhm @ 50A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs25.5 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1405 pF @ 20 V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerDI5060-8
Package/ Case8-PowerTDFN

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Diodes Incorporated 单 FET、MOSFET 产品 DMNH4011SPSQ-13

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