参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 20 V |
Current - Continuous Drain (Id) @ 25°C | 6.5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V |
Rds On (Max) @ Id, Vgs | 21mOhm @ 6.5A, 4.5V |
Vgs(th) (Max) @ Id | 1.2V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 22 nC @ 4.5 V |
Vgs (Max) | ±8V |
Input Capacitance (Ciss) (Max) @ Vds | 1520 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 1.25W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TSMT6 (SC-95) |
Package/ Case | SOT-23-6 Thin, TSOT-23-6 |
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ROHM Semiconductor 单 FET、MOSFET 产品 RQ6C065BCTCR
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