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BSM300C12P3E301

¥7405.70
单 FET、MOSFET

SICFET N-CH 1200V 300A MODULE

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologySiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C300A (Tc)
Drive Voltage (Max Rds On, Min Rds On)-
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id5.6V @ 80mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 10 V
FET FeatureStandard
Power Dissipation (Max)1360W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting Type-
Supplier Device PackageModule
Package/ CaseModule

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