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IPW65R115CFD7AXKSA1

¥47.95
单 FET、MOSFET

MOSFET N-CH 650V 21A TO247-3-41

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs115mOhm @ 9.7A, 10V
Vgs(th) (Max) @ Id4.5V @ 490µA
Gate Charge (Qg) (Max) @ Vgs41 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds1950 pF @ 400 V
FET Feature-
Power Dissipation (Max)114W (Tc)
Operating Temperature-40°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackagePG-TO247-3-41
Package/ CaseTO-247-3

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Infineon Technologies 单 FET、MOSFET 产品 IPW65R115CFD7AXKSA1

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