| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 19.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 20V |
| Rds On (Max) @ Id, Vgs | 224mOhm @ 12A, 20V |
| Vgs(th) (Max) @ Id | 4.3V @ 2.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 33.8 nC @ 20 V |
| Vgs (Max) | +25V, -15V |
| Input Capacitance (Ciss) (Max) @ Vds | 678 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 136W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | D2PAK-7 |
| Package/ Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
新闻资讯
onsemi 单 FET、MOSFET 产品 NVBG160N120SC1
作为onsemi优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购NVBG160N120SC1时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买NVBG160N120SC1绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解NVBG160N120SC1产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
NVBG160N120SC1供应商,NVBG160N120SC1现货,NVBG160N120SC1代理商,NVBG160N120SC1pdf参数资料,买NVBG160N120SC1,NVBG160N120SC1报价,NVBG160N120SC1库存
