参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 500 V |
Current - Continuous Drain (Id) @ 25°C | 30mA (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 0V |
Rds On (Max) @ Id, Vgs | 1000Ohm @ 500µA, 0V |
Vgs(th) (Max) @ Id | - |
Gate Charge (Qg) (Max) @ Vgs | - |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10 pF @ 25 V |
FET Feature | Depletion Mode |
Power Dissipation (Max) | 740mW (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-92-3 |
Package/ Case | TO-226-3, TO-92-3 (TO-226AA) |
新闻资讯
Microchip Technology 单 FET、MOSFET 产品 LND150N3-G
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