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SI7615CDN-T1-GE3

¥3.89
单 FET、MOSFET

MOSFET P-CH 20V 35A PPAK1212-8

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs9mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs63 nC @ 4.5 V
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds3860 pF @ 10 V
FET Feature-
Power Dissipation (Max)33W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® 1212-8
Package/ CasePowerPAK® 1212-8

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Vishay/ Siliconix 单 FET、MOSFET 产品 SI7615CDN-T1-GE3

作为Vishay/ Siliconix优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购SI7615CDN-T1-GE3时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买SI7615CDN-T1-GE3绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解SI7615CDN-T1-GE3产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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