TK160F10N1L,LXGQ
¥26.64
MOSFET N-CH 100V 160A TO220SM
参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 160A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 2.4mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs | 122 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 10100 pF @ 10 V |
FET Feature | - |
Power Dissipation (Max) | 375W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Surface Mount |
Supplier Device Package | TO-220SM(W) |
Package/ Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TK160F10N1L,LXGQ
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