TPN1110ENH,L1Q
￥12.10
MOSFET N-CH 200V 7.2A 8TSON
| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V |
| Current - Continuous Drain (Id) @ 25°C | 7.2A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 114mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 600 pF @ 100 V |
| FET Feature | - |
| Power Dissipation (Max) | 700mW (Ta), 39W (Tc) |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | 8-TSON Advance (3.1x3.1) |
| Package/ Case | 8-PowerVDFN |
新闻资讯
Toshiba Electronic Devices and Storage Corporation 单 FET、MOSFET 产品 TPN1110ENH,L1Q
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