参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 120 V |
Current - Continuous Drain (Id) @ 25°C | 180A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 3.6mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 4V @ 270µA |
Gate Charge (Qg) (Max) @ Vgs | 211 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 13800 pF @ 60 V |
FET Feature | - |
Power Dissipation (Max) | 300W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-TO263-7 |
Package/ Case | TO-263-7, D²Pak (6 Leads + Tab) |
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Infineon Technologies 单 FET、MOSFET 产品 IPB036N12N3GATMA1
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