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IPD068N10N3GATMA1

¥19.80
单 FET、MOSFET

MOSFET N-CH 100V 90A TO252-3

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C90A (Tc)
Drive Voltage (Max Rds On, Min Rds On)6V, 10V
Rds On (Max) @ Id, Vgs6.8mOhm @ 90A, 10V
Vgs(th) (Max) @ Id3.5V @ 90µA
Gate Charge (Qg) (Max) @ Vgs68 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds4910 pF @ 50 V
FET Feature-
Power Dissipation (Max)150W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePG-TO252-3
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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Infineon Technologies 单 FET、MOSFET 产品 IPD068N10N3GATMA1

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