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RYM002N05T2CL

¥2.74
单 FET、MOSFET

MOSFET N-CH 50V 200MA VMT3

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)50 V
Current - Continuous Drain (Id) @ 25°C200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)0.9V, 4.5V
Rds On (Max) @ Id, Vgs2.2Ohm @ 200mA, 4.5V
Vgs(th) (Max) @ Id800mV @ 1mA
Gate Charge (Qg) (Max) @ Vgs-
Vgs (Max)±8V
Input Capacitance (Ciss) (Max) @ Vds26 pF @ 10 V
FET Feature-
Power Dissipation (Max)150mW (Ta)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageVMT3
Package/ CaseSOT-723

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ROHM Semiconductor 单 FET、MOSFET 产品 RYM002N05T2CL

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