参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
IGBT Type | - |
Configuration | Three Phase Inverter |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 80 A |
Power - Max | 360 W |
Vce(on) (Max) @ Vge, Ic | 2.55V @ 15V, 50A |
Current - Collector Cutoff (Max) | 500 µA |
Input Capacitance (Cies) @ Vce | 3.3 nF @ 25 V |
Input | Three Phase Bridge Rectifier |
NTC Thermistor | Yes |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | Module |
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Infineon Technologies IGBT模块 产品 BSM50GP120OTISBOSA1
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