参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
IGBT Type | Trench Field Stop |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 150 A |
Power - Max | 520 W |
Vce(on) (Max) @ Vge, Ic | 2.1V @ 15V, 100A |
Current - Collector Cutoff (Max) | 3 mA |
Input Capacitance (Cies) @ Vce | 7 nF @ 25 V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | - |
Mounting Type | Chassis Mount |
Package/ Case | D1 |
Supplier Device Package | D1 |
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Microsemi IGBT模块 产品 APTGT100A120D1G
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