参数名称 | 参数值 |
---|---|
Product Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Single Chopper |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 900 A |
Power - Max | 5100 W |
Vce(on) (Max) @ Vge, Ic | 2.05V @ 15V, 900A |
Current - Collector Cutoff (Max) | 5 mA |
Input Capacitance (Cies) @ Vce | 54 nF @ 25 V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 150°C |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | Module |
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Infineon Technologies IGBT模块 产品 DF900R12IP4DBOSA1
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