参数名称 | 参数值 |
---|---|
Product Status | Last Time Buy |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 210 A |
Power - Max | 1250 W |
Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 150A |
Current - Collector Cutoff (Max) | 2.8 mA |
Input Capacitance (Cies) @ Vce | 11 nF @ 25 V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | Module |
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Infineon Technologies IGBT模块 产品 BSM150GB120DN2HOSA1
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