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BSM150GB120DN2HOSA1

¥1882.48
IGBT模块

IGBT MOD 1200V 210A 1250W

参数名称参数值
Product StatusLast Time Buy
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)1200 V
Current - Collector (Ic) (Max)210 A
Power - Max1250 W
Vce(on) (Max) @ Vge, Ic3V @ 15V, 150A
Current - Collector Cutoff (Max)2.8 mA
Input Capacitance (Cies) @ Vce11 nF @ 25 V
InputStandard
NTC ThermistorNo
Operating Temperature150°C (TJ)
Mounting TypeChassis Mount
Package/ CaseModule
Supplier Device PackageModule

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Infineon Technologies IGBT模块 产品 BSM150GB120DN2HOSA1

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