参数名称 | 参数值 |
---|---|
Product Status | Active |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 100 A |
Power - Max | 250 W |
Vce(on) (Max) @ Vge, Ic | 2.2V @ 15V, 100A |
Current - Collector Cutoff (Max) | 100 µA |
Input Capacitance (Cies) @ Vce | 6 nF @ 25 V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | Module |
Supplier Device Package | SP1 |
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Microchip Technology IGBT模块 产品 APTGTQ100A65T1G
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