参数名称 | 参数值 |
---|---|
Product Status | Active |
IGBT Type | Trench Field Stop |
Configuration | Asymmetrical Bridge |
Voltage - Collector Emitter Breakdown (Max) | 600 V |
Current - Collector (Ic) (Max) | 80 A |
Power - Max | 176 W |
Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 50A |
Current - Collector Cutoff (Max) | 250 µA |
Input Capacitance (Cies) @ Vce | 3.15 nF @ 25 V |
Input | Standard |
NTC Thermistor | Yes |
Operating Temperature | -40°C ~ 175°C (TJ) |
Mounting Type | Chassis Mount |
Package/ Case | SP1 |
Supplier Device Package | SP1 |
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Microchip Technology IGBT模块 产品 APTGT50DH60T1G
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