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FGH20N60SFDTU

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单 IGBT

INSULATED GATE BIPOLAR TRANSISTO

参数名称参数值
Product StatusActive
IGBT TypeField Stop
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)40 A
Current - Collector Pulsed (Icm)60 A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 20A
Power - Max165 W
Switching Energy370µJ (on), 160µJ (off)
Input TypeStandard
Gate Charge65 nC
Td (on/off) @ 25°C13ns/90ns
Test Condition400V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)34 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Package/ CaseTO-247-3
Supplier Device PackageTO-247

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Fairchild Semiconductor 单 IGBT 产品 FGH20N60SFDTU

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