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SIGC121T60NR2CX1SA3

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单 IGBT

IGBT 3 CHIP 600V WAFER

参数名称参数值
Product StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)150 A
Current - Collector Pulsed (Icm)450 A
Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 150A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C125ns/225ns
Test Condition300V, 150A, 1.5Ohm, 15V
Reverse Recovery Time (trr)-
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseDie
Supplier Device PackageDie

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Infineon Technologies 单 IGBT 产品 SIGC121T60NR2CX1SA3

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