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IGC10T65QEX1SA1

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单 IGBT

IGBT CHIP

参数名称参数值
Product StatusObsolete
IGBT TypeTrench Field Stop
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)20 A
Current - Collector Pulsed (Icm)60 A
Vce(on) (Max) @ Vge, Ic2.32V @ 15V, 20A
Power - Max-
Switching Energy-
Input TypeStandard
Gate Charge-
Td (on/off) @ 25°C-
Test Condition-
Reverse Recovery Time (trr)-
Operating Temperature-40°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Package/ CaseDie
Supplier Device PackageDie

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Infineon Technologies 单 IGBT 产品 IGC10T65QEX1SA1

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