参数名称 | 参数值 |
---|---|
Product Status | Obsolete |
IGBT Type | Trench |
Voltage - Collector Emitter Breakdown (Max) | 650 V |
Current - Collector (Ic) (Max) | 60 A |
Current - Collector Pulsed (Icm) | 225 A |
Vce(on) (Max) @ Vge, Ic | 1.68V @ 15V, 30A |
Power - Max | 63.5 W |
Switching Energy | 330µJ (on), 760µJ (off) |
Input Type | Standard |
Gate Charge | 72 nC |
Td (on/off) @ 25°C | 35ns/120ns |
Test Condition | 400V, 30A, 10Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Package/ Case | TO-3PFM, SC-93-3 |
Supplier Device Package | TO-3PF |
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Renesas Electronics Corporation 单 IGBT 产品 RJP65T54DPM-E0#T2
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