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FGD3N60LSDTM-T

¥7.20
单 IGBT
onsemi

INTEGRATED CIRCUIT

参数名称参数值
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)6 A
Current - Collector Pulsed (Icm)25 A
Vce(on) (Max) @ Vge, Ic1.5V @ 10V, 3A
Power - Max40 W
Switching Energy250µJ (on), 1mJ (off)
Input TypeStandard
Gate Charge12.5 nC
Td (on/off) @ 25°C40ns/600ns
Test Condition480V, 3A, 470Ohm, 10V
Reverse Recovery Time (trr)234 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageTO-252AA

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onsemi 单 IGBT 产品 FGD3N60LSDTM-T

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