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APT45GR65SSCD10

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单 IGBT
Microsemi

INSULATED GATE BIPOLAR TRANSISTO

参数名称参数值
Product StatusObsolete
IGBT TypeNPT
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)118 A
Current - Collector Pulsed (Icm)224 A
Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 45A
Power - Max543 W
Switching Energy-
Input TypeStandard
Gate Charge203 nC
Td (on/off) @ 25°C15ns/100ns
Test Condition433V, 45A, 4.3Ohm, 15V
Reverse Recovery Time (trr)80 ns
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device PackageD3Pak

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Microsemi 单 IGBT 产品 APT45GR65SSCD10

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