参数名称 | 参数值 |
---|---|
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 980mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 900mOhm @ 980mA, 10V |
Vgs(th) (Max) @ Id | 4V @ 380µA |
Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 319 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 1.8W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | PG-SOT223-4-21 |
Package/ Case | TO-261-4, TO-261AA |
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Infineon Technologies 单 FET、MOSFET 产品 BSP321PL6327
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