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SIHFL110TR-GE3

¥4.61
单 FET、MOSFET

MOSFET N-CH 100V 1.5A SOT223

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C1.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs540mOhm @ 900mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs8.3 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds180 pF @ 25 V
FET Feature-
Power Dissipation (Max)2W (Ta), 3.1W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-223
Package/ CaseTO-261-4, TO-261AA

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Vishay/ Siliconix 单 FET、MOSFET 产品 SIHFL110TR-GE3

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