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SIA430DJT-T1-GE3

¥4.03
单 FET、MOSFET

MOSFET N-CH 20V 12A PPAK SC70-6

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs13.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs18 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds800 pF @ 10 V
FET Feature-
Power Dissipation (Max)19.2W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackagePowerPAK® SC-70-6 Single
Package/ CasePowerPAK® SC-70-6

新闻资讯

Vishay/ Siliconix 单 FET、MOSFET 产品 SIA430DJT-T1-GE3

作为Vishay/ Siliconix优质且资深的代理服务商,深圳凌创辉电子有限公司在为您采购SIA430DJT-T1-GE3时,能够保证原装进口的品质保障以外,价格也是业界最优的,找我们买SIA430DJT-T1-GE3绝对的现货正品,需要报价和咨询请您随时联系我们,同时我们为方便您了解SIA430DJT-T1-GE3产品详情,我们提供了pdf在线观看参数资料,助您轻松采购。

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