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PJS6413_S1_00001

¥3.02
单 FET、MOSFET
PANJIT

20V P-CHANNEL ENHANCEMENT MODE M

参数名称参数值
Product StatusActive
FET TypeP-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)20 V
Current - Continuous Drain (Id) @ 25°C4.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)1.8V, 4.5V
Rds On (Max) @ Id, Vgs82mOhm @ 4.4A, 4.5V
Vgs(th) (Max) @ Id1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs7 nC @ 10 V
Vgs (Max)±12V
Input Capacitance (Ciss) (Max) @ Vds522 pF @ 10 V
FET Feature-
Power Dissipation (Max)2W (Ta)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageSOT-23-6
Package/ CaseSOT-23-6

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PANJIT 单 FET、MOSFET 产品 PJS6413_S1_00001

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