| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 750 V |
| Current - Continuous Drain (Id) @ 25°C | 51A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 29A, 18V |
| Vgs(th) (Max) @ Id | 4.8V @ 15.4mA |
| Gate Charge (Qg) (Max) @ Vgs | 94 nC @ 18 V |
| Vgs (Max) | +21V, -4V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 500 V |
| FET Feature | - |
| Power Dissipation (Max) | 150W |
| Operating Temperature | 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7L |
| Package/ Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
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