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TQM130NB06CR RLG

¥21.17
单 FET、MOSFET

MOSFET N-CH 60V 10A/50A 8PDFNU

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)60 V
Current - Continuous Drain (Id) @ 25°C10A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)7V, 10V
Rds On (Max) @ Id, Vgs13mOhm @ 10A, 10V
Vgs(th) (Max) @ Id3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2234 pF @ 30 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 83W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount, Wettable Flank
Supplier Device Package8-PDFNU (5x6)
Package/ Case8-PowerTDFN

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Taiwan Semiconductor 单 FET、MOSFET 产品 TQM130NB06CR RLG

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