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PSMN2R6-30YLC,115

¥6.77
单 FET、MOSFET
Nexperia

MOSFET N-CH 30V 100A LFPAK56

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.8mOhm @ 25A, 10V
Vgs(th) (Max) @ Id1.95V @ 1mA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds2435 pF @ 15 V
FET Feature-
Power Dissipation (Max)106W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageLFPAK56, Power-SO8
Package/ CaseSC-100, SOT-669

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Nexperia 单 FET、MOSFET 产品 PSMN2R6-30YLC,115

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