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R6004PND3FRATL

¥21.02
单 FET、MOSFET

MOSFET N-CH 600V 4A TO252

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)600 V
Current - Continuous Drain (Id) @ 25°C4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs1.8Ohm @ 2A, 10V
Vgs(th) (Max) @ Id4.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs11 nC @ 10 V
Vgs (Max)±25V
Input Capacitance (Ciss) (Max) @ Vds280 pF @ 25 V
FET Feature-
Power Dissipation (Max)65W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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ROHM Semiconductor 单 FET、MOSFET 产品 R6004PND3FRATL

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