| 参数名称 | 参数值 |
|---|---|
| Product Status | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 4A, 15V |
| Vgs(th) (Max) @ Id | 2.69V @ 2mA |
| Gate Charge (Qg) (Max) @ Vgs | 12 nC @ 15 V |
| Vgs (Max) | ±15V |
| Input Capacitance (Ciss) (Max) @ Vds | 334 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 75W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package/ Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
新闻资讯
GeneSiC Semiconductor 单 FET、MOSFET 产品 G3R350MT12J
作为GeneSiC Semiconductor优质且资深的代理服务商，深圳凌创辉电子有限公司在为您采购G3R350MT12J时，能够保证原装进口的品质保障以外，价格也是业界最优的，找我们买G3R350MT12J绝对的现货正品，需要报价和咨询请您随时联系我们，同时我们为方便您了解G3R350MT12J产品详情，我们提供了pdf在线观看参数资料，助您轻松采购。
G3R350MT12J供应商,G3R350MT12J现货,G3R350MT12J代理商,G3R350MT12Jpdf参数资料,买G3R350MT12J,G3R350MT12J报价,G3R350MT12J库存
