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IRL630SPBF

¥18.94
单 FET、MOSFET

MOSFET N-CH 200V 9A D2PAK

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)200 V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4V, 5V
Rds On (Max) @ Id, Vgs400mOhm @ 5.4A, 5V
Vgs(th) (Max) @ Id2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs40 nC @ 10 V
Vgs (Max)±10V
Input Capacitance (Ciss) (Max) @ Vds1100 pF @ 25 V
FET Feature-
Power Dissipation (Max)3.1W (Ta), 74W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageD²PAK (TO-263)
Package/ CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Vishay/ Siliconix 单 FET、MOSFET 产品 IRL630SPBF

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