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R8002CND3FRATL

¥20.38
单 FET、MOSFET

MOSFET N-CH 800V 2A TO252

参数名称参数值
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)800 V
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs4.3Ohm @ 1A, 10V
Vgs(th) (Max) @ Id5.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs12.1 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds240 pF @ 25 V
FET Feature-
Power Dissipation (Max)69W (Tc)
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-252
Package/ CaseTO-252-3, DPak (2 Leads + Tab), SC-63

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ROHM Semiconductor 单 FET、MOSFET 产品 R8002CND3FRATL

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